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09-06-2010, 11:00
Posted: 09-02-2010 09:51
Elpida Memory, Inc. and Spansion Inc., today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.
Compared to floating-gate NAND Flash memory, charge-trapping NAND Flash memory is more scalable and has a simpler cell structure. It offers superior performance, faster read and faster programming speeds.
More... (http://www.techpowerup.com/130116/Elpida_and_Spansion_Develop_4-Gigabit_Charge-Trapping_NAND_Flash_Memory.html)
Elpida Memory, Inc. and Spansion Inc., today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.
Compared to floating-gate NAND Flash memory, charge-trapping NAND Flash memory is more scalable and has a simpler cell structure. It offers superior performance, faster read and faster programming speeds.
More... (http://www.techpowerup.com/130116/Elpida_and_Spansion_Develop_4-Gigabit_Charge-Trapping_NAND_Flash_Memory.html)